Patent attributes
In a plasma processing apparatus, an operation unit configured to calculate a parameter including any one of a load impedance, a load resistance and a load reactance of a high frequency power supply and a reflection wave coefficient of a high frequency power, and a controller configured to sequentially perform multiple cycles, each having plural stages which are performed in sequence. The controller is configured to control a setting of the high frequency power supplied to an electrode to be changed at a time point when the parameter exceeds a threshold value after a processing gas is changed. The changing of the setting of the high frequency power includes changing a power level of the high frequency power and/or changing the high frequency power from one of a continuous wave and a pulse-modulated high frequency power to the other thereof.
