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US Patent 11476145 Automatic ESC bias compensation when using pulsed DC bias

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Contents

Is a
Patent
Patent

Patent attributes

Patent Applicant
Applied Materials
Applied Materials
Current Assignee
Applied Materials
Applied Materials
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
11476145
Date of Patent
October 18, 2022
Patent Application Number
16197006
Date Filed
November 20, 2018
Patent Citations
‌
US Patent 10063062 Method of detecting plasma discharge in a plasma processing system
‌
US Patent 10074518 Apparatus for controlled overshoot in a RF generator
‌
US Patent 10085796 Bipolar electrosurgical cutter with position insensitive return electrode contact
‌
US Patent 10090191 Selective plasma etching method of a first region containing a silicon atom and an oxygen atom
‌
US Patent 10102321 System, method and apparatus for refining radio frequency transmission system models
‌
US Patent 10109461 Plasma processing method
‌
US Patent 10115567 Plasma processing apparatus
‌
US Patent 10115568 Systems and methods for controlling directionality of ions in an edge region by using an electrode within a coupling ring
...
Patent Citations Received
‌
US Patent 11636998 Nanosecond pulser pulse generation
0
Patent Primary Examiner
‌
Jue Zhang
CPC Code
‌
H01J 37/32009
‌
H01J 37/32018
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H01J 37/32027
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H01L 21/02
‌
H01L 21/67
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H01L 21/683
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H01J 37/32
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H01L 21/6833
...

Disclosed herein is a system for pulsed DC biasing and clamping a substrate. The system can include a plasma chamber having an ESC for supporting a substrate. An electrode is embedded in the ESC and is electrically coupled to a biasing and clamping circuit. The biasing and clamping circuit includes at least a shaped DC pulse voltage source and a clamping network. The clamping network includes a DC voltage source and a diode, and a resistor. The shaped DC pulse voltage source and the clamping network are connected in parallel. The biasing and clamping network automatically maintains a substantially constant clamping voltage, which is a voltage drop across the electrode and the substrate when the substrate is biased with pulsed DC voltage, leading to improved clamping of the substrate.

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