Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Tenko Yamashita0
Kangguo Cheng0
Ruilong Xie0
Date of Patent
January 8, 2019
0Patent Application Number
157823800
Date Filed
October 12, 2017
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor device that includes a gate structure on a channel region of a semiconductor device. Source and drain regions may be present on opposing sides of the channel region. The semiconductor device may further include a composite gate sidewall spacer present on a sidewall of the gate structure. The composite gate sidewall spacer may include a first composition portion having an air gap encapsulated therein, and a second composition portion that is entirely solid and present atop the first composition portion.
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