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US Patent 10181392 Monitoring a discharge in a plasma process
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Patent
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Date Filed
April 1, 2016
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Date of Patent
January 15, 2019
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Patent Application Number
15088629
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Patent Citations Received
US Patent 11495470 Method of enhancing etching selectivity using a pulsed plasma
US Patent 11508554 High voltage filter assembly
US Patent 12125673 Pulsed voltage source for plasma processing applications
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US Patent 11462389 Pulsed-voltage hardware assembly for use in a plasma processing system
US Patent 11476090 Voltage pulse time-domain multiplexing
US Patent 11476145 Automatic ESC bias compensation when using pulsed DC bias
US Patent 11972924 Pulsed voltage source for plasma processing applications
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US Patent 11984306 Plasma chamber and chamber component cleaning methods
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US Patent 12106938 Distortion current mitigation in a radio frequency plasma processing chamber
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US Patent 12111341 In-situ electric field detection method and apparatus
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•••
Patent Inventor Names
Fabian Wunn
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Ulrich Richter
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Daniel Leypold
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
10181392
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Patent Primary Examiner
Alexander H Taningco
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