US Patent 10204883 Semiconductor device and manufacturing method thereof

A semiconductor device includes a semiconductor die, an insulative layer, a conductive feature and a shield. The insulative layer surrounds the semiconductor die, and the insulative layer has a first surface and a second surface opposite to each other. The conductive feature is extended from the first surface to be proximal to the second surface of the insulative layer, and the conductive feature has a first end exposed by the first surface of the insulative layer. The shield covers the first surface of the insulative layer and is grounded through the first end of the conductive feature exposed by the first surface of the insulative layer.