Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hidekazu Miyairi0
Kengo Akimoto0
Yasuo Nakamura0
Date of Patent
February 12, 2019
Patent Application Number
15723479
Date Filed
October 3, 2017
Patent Citations Received
Patent Primary Examiner
Patent abstract
To provide a method by which a semiconductor device including a thin film transistor with excellent electric characteristics and high reliability is manufactured with a small number of steps. After a channel protective layer is formed over an oxide semiconductor film containing In, Ga, and Zn, a film having n-type conductivity and a conductive film are formed, and a resist mask is formed over the conductive film. The conductive film, the film having n-type conductivity, and the oxide semiconductor film containing In, Ga, and Zn are etched using the channel protective layer and gate insulating films as etching stoppers with the resist mask, so that source and drain electrode layers, a buffer layer, and a semiconductor layer are formed.
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