Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
June 29, 2021
Patent Application Number
16420854
Date Filed
May 23, 2019
Patent Primary Examiner
Patent abstract
In a transistor including an oxide semiconductor layer, an oxide insulating layer is formed so as to be in contact with the oxide semiconductor layer. Then, oxygen is introduced (added) to the oxide semiconductor layer through the oxide insulating layer, and heat treatment is performed. Through these steps of oxygen introduction and heat treatment, impurities such as hydrogen, moisture, a hydroxyl group, or hydride are intentionally removed from the oxide semiconductor layer, so that the oxide semiconductor layer is highly purified.
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