Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
February 19, 2019
Patent Application Number
15802547
Date Filed
November 3, 2017
Patent Citations Received
Patent Primary Examiner
Patent abstract
Embodiments of the invention are directed to methods and resulting structures for forming a storage element using phase change memory (PCM). In a non-limiting embodiment of the invention, a PCM layer is formed over a surface of a bottom electrode. A top electrode is formed over the PCM layer using a tone inversion process that includes a sacrificial layer. A PCM pillar is then formed by patterning the PCM layer to expose a surface of the bottom electrode. The tone inversion process enables a sub-50 nm PCM pillar diameter.
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