Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
February 19, 2019
Patent Application Number
15063358
Date Filed
March 7, 2016
Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor device includes a first metal wiring layer, an interlayer insulating layer formed over the first metal layer, a second metal wiring structure embedded in the interlayer dielectric layer and connected to the first metal wiring layer, and an etch-stop layer disposed between the first metal wiring and the first interlayer dielectric layer. The etch-stop layer includes one or more sub-layers. The etch-stop layer includes a first sub-layer made of an aluminum-based insulating material, hafnium oxide, zirconium oxide or titanium oxide.
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