Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
February 19, 2019
Patent Application Number
15440129
Date Filed
February 23, 2017
Patent Citations Received
...
Patent Primary Examiner
Patent abstract
An MRAM memory cell is proposed that is based on spin accumulation torque. One embodiment includes a magnetic tunnel junction, a spin accumulation layer connected to the magnetic tunnel junction and a polarization layer connected to the spin accumulation layer. The polarization layer and the spin accumulation layer use spin accumulation to provide a spin accumulation torque on the free magnetic layer of the magnetic tunnel junction to change direction of magnetization of the free magnetic layer.
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