Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
January 12, 2021
Patent Application Number
16458651
Date Filed
July 1, 2019
Patent Citations
Patent Citations Received
Patent Primary Examiner
Patent abstract
A MRAM memory cell comprises a SHE layer, a magnetic bit layer with perpendicular anisotropy and an Oersted layer. The magnetic bit layer has a switchable direction of magnetization in order to store data. Data is written to the MRAM memory cell using the Spin Hall Effect so that spin current generated in the SHE layer exerts a torque on the magnetic bit layer while the Oersted layer provides heat and an Oersted field to enable deterministic switching. Data is read form the MRAM memory cell using the Anomalous Hall Effect and sensing voltage at the Oersted layer.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
