US Patent 10891999 Perpendicular SOT MRAM

A MRAM memory cell comprises a SHE layer, a magnetic bit layer with perpendicular anisotropy and an Oersted layer. The magnetic bit layer has a switchable direction of magnetization in order to store data. Data is written to the MRAM memory cell using the Spin Hall Effect so that spin current generated in the SHE layer exerts a torque on the magnetic bit layer while the Oersted layer provides heat and an Oersted field to enable deterministic switching. Data is read form the MRAM memory cell using the Anomalous Hall Effect and sensing voltage at the Oersted layer.