Patent attributes
A gate cut structure for finFETs, and a related method, are disclosed. The gate cut structure separates and electrically isolates an end of a first metal gate conductor of a first finFET from an end of a second metal gate conductor of a second finFET. The gate cut structure includes a body contacting the end of the first and second metal gate conductors. A liner spacer separates a lower portion of the body from an interlayer dielectric (ILD), and an upper portion of the body contacts the ILD. During formation, the liner spacer allows for a larger gate cut opening to be used to allow quality cleaning of the gate cut opening, but also reduction in size of the spacing between metal gate conductor ends of the finFETs. In one example, the body may have a lower portion having a width less than an upper portion thereof.
