Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Takashi Ando0
Cheng Chi0
Praneet Adusumilli0
Reinaldo Vega0
Date of Patent
February 27, 2024
0Patent Application Number
174828740
Date Filed
September 23, 2021
0Patent Citations
Patent Primary Examiner
Patent abstract
A field effect device is provided. The field effect device includes an active gate structure, a gate contact within the active gate structure, wherein the gate contact is the same height as the active gate structure, and a gate cut dielectric on opposite sides of the gate contact and active gate structure.
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