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US Patent 11916014 Gate contact inside gate cut trench

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
September 23, 2021
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Date of Patent
February 27, 2024
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Patent Application Number
17482874
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Patent Citations
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US Patent 9853110 Method of forming a gate contact structure for a semiconductor device
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US Patent 10224246 Multi-layer filled gate cut to prevent power rail shorting to gate structure
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US Patent 10297452 Methods of forming a gate contact structure for a transistor
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US Patent 10236213 Gate cut structure with liner spacer and related method
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US Patent 10573724 Contact over active gate employing a stacked spacer
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US Patent 9379027 Method of utilizing trench silicide in a gate cross-couple construct
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US Patent 9679985 Devices and methods of improving device performance through gate cut last process
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Patent Inventor Names
Takashi Ando
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Cheng Chi
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Praneet Adusumilli
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Reinaldo Vega
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11916014
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Patent Primary Examiner
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Tu-Tu V Ho
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CPC Code
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H01L 27/0924
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H01L 27/092
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H01L 23/5286
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H01L 23/5226
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