Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Juntao Li0
Kangguo Cheng0
Peng Xu0
Heng Wu0
Date of Patent
March 26, 2019
Patent Application Number
15814376
Date Filed
November 15, 2017
Patent Citations Received
...
Patent Primary Examiner
Patent abstract
Inner and outer spacers for nanosheet transistors are formed using techniques that improve junction uniformity. One nanosheet transistor device includes outer spacers and an interlevel dielectric layer liner made from the same material. A second nanosheet transistor device includes outer spacers, inner spacers and an interlevel dielectric layer liner that are all made from the same material.
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