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US Patent 10243061 Nanosheet transistor

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
Date Filed
November 15, 2017
Date of Patent
March 26, 2019
Patent Application Number
15814376
Patent Citations Received
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US Patent 11929425 Nanowire stack GAA device with inner spacer
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US Patent 11271113 Semiconductor device structure and method for forming the same
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US Patent 11652156 Nanosheet transistor with asymmetric gate stack
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US Patent 11652161 Nanosheet channel-to-source and drain isolation
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US Patent 11664656 ESD protection for integrated circuit devices
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US Patent 11670718 Semiconductor device structure with inner spacer
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US Patent 11368016 ESD protection for integrated circuit devices
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US Patent 11495688 Source and drain epitaxy and isolation for gate structures
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US Patent 10930498 Methods for producing nanowire stack GAA device with inner spacer
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US Patent 10985279 Source and drain epitaxy and isolation for gate structures
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•••
Patent Inventor Names
Juntao Li
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Kangguo Cheng
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Peng Xu
0
Heng Wu
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
10243061
Patent Primary Examiner
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Kevin M. Picardat

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