Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Zhenxing Bi0
Juntao Li0
Kangguo Cheng0
Peng Xu0
Date of Patent
April 20, 2021
0Patent Application Number
163523230
Date Filed
March 13, 2019
0Patent Citations
Patent Primary Examiner
Patent abstract
Semiconductor devices and methods for forming the semiconductor devices include forming a sacrificial layer on a substrate on each side of a stack of nanosheets, the stack of nanosheets including first nanosheets and second nanosheets stacked in alternating fashion with a dummy gate structure formed thereon. Source and drain regions are grown on from the sacrificial layer and from ends of the second nanosheets to form source and drain regions in contact with each side of the stack of nanosheets. The sacrificial layer is removed. An interlevel dielectric is deposited around the source and drain regions to fill between the source and drain regions and the substrate.
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