Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
April 2, 2019
Patent Application Number
16016454
Date Filed
June 22, 2018
Patent Citations Received
Patent Primary Examiner
Patent abstract
An asymmetric field-effect transistor having different gate-to-source and gate-to-drain overlaps allows lower parasitic capacitance on the drain side of the device and lower resistance on the source side. Source and drain regions having different configurations can be formed simultaneously using the same precursor materials.
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