Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Zhenxing Bi0
Heng Wu0
Kangguo Cheng0
Peng Xu0
Date of Patent
December 24, 2019
0Patent Application Number
165042440
Date Filed
July 6, 2019
0Patent Citations
Patent Primary Examiner
Patent abstract
A field-effect transistor device including an asymmetric spacer assembly allows lower parasitic capacitance on the drain side of the device and lower resistance on the source side. The asymmetric spacer assembly is formed by a self-aligned process, resulting in less gate/junction overlap on the drain side of the device and greater gate/junction overlap on the source side of the device. Asymmetric transistors having small gate lengths can be obtained without overlay/misalignment issues.
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