Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
November 20, 2018
Patent Application Number
15808869
Date Filed
November 9, 2017
Patent Citations Received
Patent Primary Examiner
Patent abstract
A field-effect transistor device including an asymmetric spacer assembly allows lower parasitic capacitance on the drain side of the device and lower resistance on the source side. The asymmetric spacer assembly is formed by a self-aligned process, resulting in less gate/junction overlap on the drain side of the device and greater gate/junction overlap on the source side of the device. Asymmetric transistors having small gate lengths can be obtained without overlay/misalignment issues.
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