Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Zhenxing Bi0
Heng Wu0
Kangguo Cheng0
Peng Xu0
Date of Patent
December 17, 2019
0Patent Application Number
162913670
Date Filed
March 4, 2019
0Patent Citations
Patent Primary Examiner
Patent abstract
An asymmetric field-effect transistor having different gate-to-source and gate-to-drain overlaps allows lower parasitic capacitance on the drain side of the device and lower resistance on the source side. Source and drain regions having different configurations can be formed simultaneously using the same precursor materials.
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