Patent 10262936 was granted and assigned to Toshiba Memory Corporation on April, 2019 by the United States Patent and Trademark Office.
A semiconductor device according to the present embodiment includes a stacked body having an end which is step-shaped and a contact in each of the steps of the end. Each of the steps includes alternating a plurality of conductive layers and a plurality of insulating layers. The contact includes a plurality of conductive films contacting each of the conductive layers, and a plurality of insulating films contacting each of the insulating layers, the insulating films being provided between the conductive films.