US Patent 10269691 Method of forming semiconductor structure

A method of forming a semiconductor device includes forming a first redistribution line on a substrate; forming a plurality of first vertical conductive structures on the first redistribution line and electrically coupled to the first redistribution line; forming a plurality of second vertical conductive structures on the substrate, wherein the first vertical conductive structures and the second vertical conductive structures are interlaced with each other, and the second vertical conductive structures are spaced apart from the first redistribution line; attaching a device die on the substrate; applying a molding compound in a molding layer overlying the substrate to surround the device die; and forming a second redistribution line on the molding layer, wherein the second redistribution line is electrically coupled to the second vertical conductive structures.