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US Patent 10269825 Semiconductor device and method for manufacturing same

Patent 10269825 was granted and assigned to Toshiba Memory Corporation on April, 2019 by the United States Patent and Trademark Office.

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Patent abstract

According to one embodiment, a stacked body includes a plurality of metal layers stacked with an insulator interposed. A semiconductor body extends in a stacking direction through the stacked body. A charge storage portion is provided between the semiconductor body and one of the metal layers. A metal nitride film has a first portion and a second portion. The first portion is provided between the charge storage portion and one of the metal layers. The second portion is thicker than the first portion and is provided between one of the metal layers and the insulator.

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