Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yu-Ru Yang0
Chao-Ching Hsieh0
Chih-Chien Liu0
Hsiao-Pang Chou0
Date of Patent
April 23, 2019
Patent Application Number
15818673
Date Filed
November 20, 2017
Patent Citations Received
Patent Primary Examiner
Patent abstract
The present invention provides a semiconductor structure, the semiconductor structure includes a fin transistor (fin filed effect transistor, finFET) located on a substrate, the fin transistor includes a gate structure crossing over a fin structure, and at least one source/drain region. And a resistive random access memory (RRAM) includes a lower electrode, a resistance switching layer and a top electrode being sequentially located on the source/drain region and electrically connected to the fin transistor.
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