Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
June 15, 2021
Patent Application Number
16746496
Date Filed
January 17, 2020
Patent Citations
Patent Primary Examiner
Patent abstract
A semiconductor structure includes an oxide ReRAM co-integrated with a drain region of a field effect transistor (FET). The oxide ReRAM has a tip region defined by a pointed cone that contacts a faceted upper surface of the drain region of the FET. Such a tip region enhances the electric field of the oxide ReRAM and thus helps to control forming of the conductive filament of the oxide ReRAM.
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