US Patent 10269869 High-density field-enhanced ReRAM integrated with vertical transistors

A method is presented for integrating a resistive random access memory (ReRAM) device with vertical transistors on a single chip. The method includes forming a vertical field effect transistor (FET) including an epitaxial tip defining a drain terminal and forming the ReRAM device in direct contact with the epitaxial tip of the vertical FET such that a current conducting filament is formed at the epitaxial tip due to electric field enhancement.