Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
February 21, 2023
Patent Application Number
17346686
Date Filed
June 14, 2021
Patent Citations
Patent Primary Examiner
Embodiments of the present invention include a memory cell that has a vertically-oriented fin. The memory cell may also include a resistive memory device located on a first lateral side of the fin. The resistive memory device may include a bottom electrode, a top electrode, and a resistive element between the bottom electrode and the top electrode. The memory cell may also include a vertical field-effect transistor having a metal gate and a gate dielectric contacting a second lateral side of the fin opposite the first lateral side.
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