US Patent 10276453 Circuits constructed from stacked field-effect transistors

Structures that include vertically-arranged field-effect transistors and methods for forming a structure that includes vertically-arranged field-effect transistors. A first field-effect transistor includes a section of a first fin, a first source/drain region, and a second source/drain region. The section of the first fin is arranged between the first source/drain region and the second source/drain region of the first field-effect transistor. A second field-effect transistor includes a second fin arranged over the section of the first fin, a first source/drain region, and a second source/drain region. A functional gate structure has an overlapping arrangement with the section of the first fin and also has an overlapping arrangement with a section of the second fin that is arranged between the first source/drain region and the second source/drain region of the second field-effect transistor.