US Patent 10276581 Integrated circuit chip and manufacturing method thereof

An integrated circuit chip includes a substrate, a first type memory cell, and a second type memory cell. The first type memory cell is disposed over the substrate and includes an N-type transistor. The N-type transistor of the first type memory cell includes a gate electrode including a first work function layer having a first thickness. The second type memory cell is disposed over the substrate and includes an N-type transistor. The N-type transistor of the second type memory cell includes a gate electrode including a second work function layer having a second thickness different from the first thickness. The first type memory cell and the second type memory cell substantially have the same cell size.