Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Bassem M. Hamieh0
Stuart A. Sieg0
Junli Wang0
Brent A. Anderson0
Date of Patent
June 4, 2019
0Patent Application Number
152974180
Date Filed
October 19, 2016
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A method includes forming a plurality of fins on a substrate. The method further includes forming a plurality of deep trenches in the substrate and interposed between each fin of the plurality of fins. The method further includes forming a doped semiconductor layer having a uniform thickness, wherein the doped semiconductor layer is formed prior to removing any fins of the plurality of fins.
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