Patent attributes
A stacked III-V semiconductor diode that has an n+ layer having a dopant concentration of at least 1019 N/cm3, an n− layer having a dopant concentration of 1012 N/cm3 to 1016 N/cm3, a layer thickness of 10 μm to 300 μm, a p+ layer having a dopant concentration of 5·1018 N/cm3 to 5·1020 cm3 and a layer thickness greater than 2 μm, the layers following each other in the specified order, each including a GaAs compound or being made from a GaAs compound and having a monolithic design, the n+ layer or the p+ layer being a substrate, and a lower side of the n− layer being integrally connected to an upper side of the n+ layer. The stacked III-V semiconductor diode including a first defect layer having a layer thickness greater than 0.5 μm, the defect layer being situated within the n− layer.
