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US Patent 10319627 Air-gap spacers for field-effect transistors
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Patent
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Date Filed
December 13, 2016
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Date of Patent
June 11, 2019
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Patent Application Number
15376831
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Patent Citations
US Patent 10164029 Semiconductor structure and manufacturing method thereof
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US Patent 10204999 Transistor with airgap spacer
Patent Citations Received
US Patent 10861746 Method of manufacturing a semiconductor device
US Patent 11309221 Single metallization scheme for gate, source, and drain contact integration
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US Patent 10985076 Single metallization scheme for gate, source, and drain contact integration
Patent Inventor Names
Hoon Kim
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Ruilong Xie
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Chanro Park
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Min Gyu Sung
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
10319627
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Patent Primary Examiner
Charles D. Garber
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