US Patent 10320373 RF production using nonlinear semiconductor junction capacitance

Some embodiments include a high voltage nonlinear transmission line comprising a high voltage input configured to receive electrical pulses having a first peak voltage that is greater than 10 kV; a plurality of circuit elements electrically coupled with ground, each of the plurality of circuit elements includes a nonlinear semiconductor junction capacitance device; a plurality of inductors, at least one of the plurality of inductors is electrically coupled between two circuit elements of the plurality of circuit elements; and a high voltage output providing a high voltage output signal that oscillates at a frequency greater than 100 MHz about a voltage greater than 10 kV.