Patent attributes
A manufacturing method of a TFT substrate uses a bottom gate structure and the entire process can be completely done with seven masks. The number of masks used is reduced. The manufacturing process of a TFT substrate is simplified. Product yield and increase productivity are effectively improved. By subjecting two ends of a semiconductor pattern to heavy ion doping to form a source electrode and a drain electrode, the manufacturing steps can be reduced and the source electrode and the drain electrode so formed do not need to extend through a via hole formed in an interlayer dielectric layer to get in connection with the two ends of the active layer so as to effectively reduce contact resistance and improve product yield. Also provided is a TFT substrate manufactured with the method.
