Patent attributes
The present invention teaches a LTPS TFT substrate and its manufacturing method. The manufacturing method, after forming vias using the photoresist layer on the ILD layer and the gate insulation layer above the source/drain contact regions, and before peeling the photoresist layer, forms conductive layers in the vias by depositing conductive material in the vias. The source/drain electrodes contact the conductive layers in the vias and therefore are conducted to the source/drain contact regions, thereby effectively resolving the problem of contact impedance being too high between the source/drain electrodes and the source/drain contact regions from the existing re-etch LDD technique. Then, through the re-etch LDD technique, the present invention is able to omit a mask process without sacrificing product characteristics. In addition, the vias and the photoresist layer have undercut structure, preventing the deposited conductive material from affecting the photoresist layer's peeling and guaranteeing the photoresist layer's peeling efficiency.
