Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Kangguo Cheng0
Zhenxing Bi0
Juntao Li0
Peng Xu0
Date of Patent
June 25, 2019
0Patent Application Number
152432460
Date Filed
August 22, 2016
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A method of forming a field effect transistor (FET) includes performing an oxidation on a nanosheet structure having alternating sheets of silicon and silicon germanium. An oxide etch is performed to remove portions of the sheets of silicon germanium. Other embodiments are also described herein.
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