Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hsiao-Tsung Yen0
Yuh-Sheng Jean0
Cheng-Wei Luo0
Ta-Hsun Yeh0
Date of Patent
July 2, 2019
0Patent Application Number
154326260
Date Filed
February 14, 2017
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A fin field-effect transistor is provided. The fin field-effect transistor includes a substrate, a fin structure, a gate-stacked structure, and an isolation structure. The fin structure is disposed on the substrate, and the gate-stacked structure covers the fin structure. The isolation structure disposed on the substrate to isolate the gate-stacked structure from the substrate has different thicknesses in different portions.
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