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US Patent 10347744 Method and structure of forming FinFET contact

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
Date Filed
January 9, 2018
Date of Patent
July 9, 2019
Patent Application Number
15865383
Patent Citations Received
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US Patent 11469143 Semiconductor device with elongated pattern
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US Patent 11621354 Integrated circuit structures having partitioned source or drain contact structures
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US Patent 11296029 Semiconductor device and method of fabricating same
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US Patent 11309218 Method of manufacturing a semiconductor device having a source/drain contact plug with a recessed portion using a mask pattern layer
0
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US Patent 11935931 Selective shrink for contact trench
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US Patent 11978672 Semiconductor device with elongated pattern
0
Patent Inventor Names
Peng Xu
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Kangguo Cheng
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
10347744
Patent Primary Examiner
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Sonya D McCall-Shepard

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