Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Abraham Arceo de la Pena0
Jing Guo0
Ruilong Xie0
Ekmini Anuja De Silva0
Date of Patent
March 19, 2024
0Patent Application Number
168947740
Date Filed
June 6, 2020
0Patent Citations
...
Patent Primary Examiner
Patent abstract
Techniques for selective CD shrink for source and drain contact trench to optimize FET device performance are provided. In one aspect, a semiconductor FET device includes: at least one gate; source and drains on opposite sides of the at least one gate; recesses in the source and drains; and metal contacts disposed over the source and drains and in the recesses, wherein the metal contacts are in direct contact with a bottom and sidewalls of each of the recesses in both a first direction and a second direction, wherein the first direction is perpendicular to the at least one gate, and wherein the second direction is parallel to the at least one gate. A method of forming a semiconductor FET device is also provided.
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