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US Patent 11935931 Selective shrink for contact trench

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
June 6, 2020
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Date of Patent
March 19, 2024
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Patent Application Number
16894774
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Patent Citations
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US Patent 9673295 Contact resistance optimization via EPI growth engineering
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US Patent 9768062 Method for forming low parasitic capacitance source and drain contacts
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US Patent 9805989 Sacrificial cap for forming semiconductor contact
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US Patent 9847390 Self-aligned wrap-around contacts for nanosheet devices
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US Patent 10347744 Method and structure of forming FinFET contact
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US Patent 10367077 Wrap around contact using sacrificial mandrel
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US Patent 10586872 Formation of wrap-around-contact to reduce contact resistivity
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US Patent 8853862 Contact structures for semiconductor transistors
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US Patent 9406804 FinFETs with contact-all-around
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US Patent 9466722 Large area contacts for small transistors
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•••
Patent Inventor Names
Abraham Arceo de la Pena
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Jing Guo
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Ruilong Xie
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Ekmini Anuja De Silva
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11935931
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Patent Primary Examiner
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Moin M Rahman
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CPC Code
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H01L 21/762
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H01L 29/0649
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H01L 21/76224
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H01L 21/823493
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H01L 21/823885
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H01L 21/823412
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H01L 29/66522
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H01L 21/76846
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H01L 21/76849
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H01L 29/7845
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•••

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