Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
July 23, 2019
Patent Application Number
15707990
Date Filed
September 18, 2017
Patent Citations Received
Patent Primary Examiner
Patent abstract
Embodiments of the present disclosure provide wet process based methods for modifying threshold value (Vt) of high-k metal gate using self-assembled monolayer (SAM) on dedicated transistor. In one embodiment, the method includes forming a gate structure over a substrate, the gate structure comprising a gate dielectric layer, a barrier layer formed over the gate dielectric layer, and an oxide layer formed over the barrier layer, and forming a self-assembled monolayer on the oxide layer by exposing the oxide layer to an aqueous solution containing metal oxides in a metal dissolving acid.
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