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Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Ying-Liang Chuang0
Ju-Li Huang0
Kuo Bin Huang0
Ming-Hsi Yeh0
Chih-Long Chiang0
Date of Patent
June 8, 2021
0Patent Application Number
165177670
Date Filed
July 22, 2019
0Patent Primary Examiner
Patent abstract
Embodiments of the present disclosure provide wet process based methods for modifying threshold value (Vt) of high-k metal gate using self-assembled monolayer (SAM) on dedicated transistor. In one embodiment, the method includes forming a gate structure over a substrate, the gate structure comprising a gate dielectric layer, a barrier layer formed over the gate dielectric layer, and an oxide layer formed over the barrier layer, and forming a self-assembled monolayer on the oxide layer by exposing the oxide layer to an aqueous solution containing metal oxides in a metal dissolving acid.
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