Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Che-Cheng Chang0
Chih-Han Lin0
Date of Patent
July 30, 2019
0Patent Application Number
158473070
Date Filed
December 19, 2017
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor device includes a first gate structure disposed over a substrate. The first gate structure extends in a first direction. A second gate structure is disposed over the substrate. The second gate structure extends in the first direction. A dielectric material is disposed between the first gate structure and the second gate structure. An air gap is disposed within the dielectric material.
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