Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Chih-Hao Wang0
Chien Ning Yao0
Bo-Feng Young0
Kuan-Lun Cheng0
Sai-Hooi Yeong0
Date of Patent
August 16, 2022
0Patent Application Number
171227210
Date Filed
December 15, 2020
0Patent Citations
Patent Citations Received
Patent Primary Examiner
Fin-like field effect transistors (FinFETs) and methods of fabrication thereof are disclosed herein. The FinFETs disclosed herein have gate air spacers integrated into their gate structures. An exemplary transistor includes a fin and a gate structure disposed over the fin between a first epitaxial source/drain feature and a second epitaxial source/drain feature. The gate structure includes a gate electrode, a gate dielectric, and gate air spacers disposed between the gate dielectric and sidewalls of the gate electrode.
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