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US Patent 10381438 Vertically stacked NFETS and PFETS with gate-all-around structure
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Patent
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Date Filed
November 2, 2017
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Date of Patent
August 13, 2019
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Patent Application Number
15802067
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Patent Citations Received
US Patent 11869812 Stacked complementary field effect transistors
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US Patent 11594535 High performance nanosheet fabrication method with enhanced high mobility channel elements
US Patent 11610980 Method for processing a FinFET device
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US Patent 11769830 Semiconductor devices
US Patent 11776856 Nanosheet transistors with different gate materials in same stack and method of making
US Patent 11777034 Hybrid complementary field effect transistor device
US Patent 11837604 Forming stacked nanosheet semiconductor devices with optimal crystalline orientations around devices
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Patent Inventor Names
Alexander Reznicek
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Jingyun Zhang
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Pouya Hashemi
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Takashi Ando
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Choonghyun Lee
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
10381438
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Patent Primary Examiner
Galina G Yushina
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