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US Patent 10381548 Multi-resistance MRAM
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Patent
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Date Filed
February 8, 2018
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Date of Patent
August 13, 2019
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Patent Application Number
15891370
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Patent Citations
US Patent 10192789 Methods of fabricating dual threshold voltage devices
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US Patent 10229723 Spin orbit torque magnetoresistive random access memory containing composite spin hall effect layer including beta phase tungsten
US Patent 10026478 Biasing scheme for multi-layer cross-point ReRAM
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Patent Citations Received
US Patent 11386320 Magnetic domain wall-based non-volatile, linear and bi-directional synaptic weight element
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US Patent 11515472 Multi-resistance MRAM
Patent Inventor Names
Won Ho Choi
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Young-Suk Choi
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
10381548
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Patent Primary Examiner
Hien N Nguyen
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