Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Akihisa Shimomura0
Shunpei Yamazaki0
Tetsunori Maruyama0
Yasumasa Yamane0
Yoshinori Yamada0
Yuhei Sato0
Date of Patent
August 20, 2019
0Patent Application Number
145805660
Date Filed
December 23, 2014
0Patent Citations Received
...
Patent Primary Examiner
Patent abstract
A method of forming an oxide semiconductor includes a step of depositing an oxide semiconductor layer over a substrate by using a sputtering apparatus in which in a target containing indium, an element M (aluminum, gallium, yttrium, or tin), zinc, and oxygen, the substrate which faces a surface of the target, and a magnet unit comprising a first magnet and a second magnet on a rear surface side of the target are provided. In the method, deposition is performed under a condition that a maximum intensity of a horizontal magnetic field is greater than or equal to 350 G and less than or equal to 2000 G in a plane where a vertical distance toward the substrate from a surface of the magnet unit is 10 mm.
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