US Patent 10395711 Perpendicular source and bit lines for an MRAM array

A memory device comprising an array of memory cells wherein each memory cell comprises a respective magnetic random access memory (MRAM) element, a respective gating transistor, and a common wordline coupled to gates of gating transistors of said array of memory cells. The memory device further comprises a common source line coupled to sources of said gating transistors, wherein said common source line is routed perpendicular to said plurality of bit lines within said array of memory cells, and a plurality of bit lines which are routed parallel to each other and connected to the drains of said gating transistors, wherein each bit line is associated with a respective memory cell of said array of memory cells.